The Effect of SbI3 Doping on the Structure and Electrical Properties of n-Type Bi1.8Sb0.2Te2.85Se0.15 Alloy Prepared by the Free Growth Method

Warrendale, Pa / TMS (2017, 2018) [Contribution to a conference proceedings, Journal Article]

Journal of electronic materials
Volume: 47
Issue: 2
Page(s): 998-1002

Authors

Selected Authors

Wang, Xiaoyu
Yu, Yuan
Zhu, Bin
Gao, Na
Huang, Zhongyue

Other Authors

Xiang, Bo
Zu, Fangqiu

Identifier