The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

Melville, NY / AIP [u.a.] (2012) [Journal Article]

Journal of applied physics
Volume: 112
Issue: 8
Page(s): 084506

Authors

Selected Authors

Oosthoek, J. L. M.
Krebs, D.
Salinga, M.
Gravesteijn, D. J.
Hurkx, G. A. M.

Other Authors

Kooi, B. J.

Identifier