Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature

Amsterdam [u.a.] / Elsevier (1989) [Journal Article]

Applied surface science
Volume: 41/42
Page(s): 169

Authors

Selected Authors

Esser, N.
Hünermann, M.
Resch, U.
Spaltmann, D.
Geurts, J.

Other Authors

Zahn, D. R. T.
Richter, W.
Williams, R. H.

Identifier

  • REPORT NUMBER: RWTH-CONV-050498